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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1553
DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications
PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings (Ta=25ae )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg

PARAMETER
CHA IN
Collector current Base current
Collector-base voltage
Collector-emitter voltage Emitter-base voltage
E SEM NG
Open base
Open emitter
OND IC
CONDITIONS
TOR UC
VALUE 1500 600 5 2.5 1 40 150 -55~150
UNIT V V V A A W ae ae
Open collector
Collector power dissipation Junction temperature Storage temperature
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN
2SD1553
SYMBOL
TYP.
MAX
UNIT
V(BR)EBO
Emitter-base breakdown voltage
IE=200mA , IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=2A; IB=0.6A
5.0
8.0
V
VBEsat
Base-emitter saturation voltage
IC=2A; IB=0.6A
1.5
V
ICBO
Collector cut-off current
VCB=500V; IE=0
10
|I
A
hFE
DC current gain
IC=0.5A ; VCE=5V
8
fT
Transition frequency
IC=0.1A ; VCE=10V
3
MHz
COB
Collector output capacitance
VF
Fall time
Diode forward voltage

IE=0 ; VCB=10V;f=1MHz
tf
IN
ANG CH
MIC E SE
IF=2.5A ICP=2A ;IB1(end)=0.6A
DUC ON
95
TOR
2.0 1.0 |I
pF
1.6
V
0.5
s
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1553

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 Outline dimensions (unindicated tolerance:A
0.15 mm)
3


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